? 2002 ixys all rights reserved 1 - 2 i rms = 175 a v rrm = 800-1600 v v rsm v rrm type v dsm v drm vv 800 800 mmo 175-08io7 mlo 175-08io7 1200 1200 mmo 175-12io7 mlo 175-12io7 1600 1600 mmo 175-16io7 mlo 175-16io7 features ? thyristor controller for ac (circuit w1c acc. to iec) for mains frequency isolation voltage 3000 v~ planar glass passivated chips low forward voltage drop lead suitable for pc board solering applications switching and control of single and three phase ac circuits light and temperature control softstart ac motor controller solid state switches advantages easy to mount with two screws space and weight savings improved temperature and power cycling high power density small and light weight mmo 175 mlo 175 symbol conditions maximum ratings i rms t c = 85c, 50 - 400 hz, (per single controller) 175 a i trms 125 a i tavm t c = 85c; 180 sine 80 a i tsm t vj = 45c t = 10 ms (50 hz), sine 1500 a v r = 0 t = 8.3 ms (60 hz), sine 1600 a t vj = 125c t = 10 ms (50 hz), sine 1350 a v r = 0 t = 8.3 ms (60 hz), sine 1450 a i 2 t t vj = 45c t = 10 ms (50 hz), sine 11200 a 2 s v r = 0 t = 8.3 ms (60 hz), sine 10750 a 2 s t vj = 125c t = 10 ms (50 hz), sine 9100 a 2 s v r = 0 t = 8.3 ms (60 hz), sine 8830 a 2 s (di/dt) cr t vj = 125c repetitive, i t = 80 a 150 a/s f = 50 hz, t p = 200 s v d = 2 / 3 v drm i g = 0.45 a non repetitive, i t = i tavm 500 a/s di g /dt = 0.45 a/s (dv/dt) cr t vj = 125c; v dr = 2 / 3 v drm 1000 v/s r gk = ; method 1 (linear voltage rise) p gm t vj = 125c t p = 30 s 10 w i t = i tavm t p = 300 s 5 w p gavm 0.5 w v rgm 10 v t vj -40...+150 c t vjm 150 c t stg -40...+125 c v isol 50/60 hz, rms t = 1 min 2500 v~ i isol 1 ma t = 1 s 3000 v~ m d mounting torque (m4) 1.5...2.0/14...18 nm/lb.in. weight typ. 18 g data according to iec 60747 and to a single thyristor/diode unless otherwise stated. ac controller modules preliminary data 241 i / h g / f g / f i / h a n mmo (w1c) mlo (w1h) a
? 2002 ixys all rights reserved 2 - 2 symbol conditions characteristic values i d , i r t vj = 125c; v r = v rrm ; v d = v drm 5ma v t i t = 200 a; t vj = 25c 1.57 v v t0 for power-loss calculations only 0.85 v r t 3.7 m v gt v d = 6 v t vj = 25c 1.5 v t vj = -40c 1.6 v i gt v d = 6 v t vj = 25c 100 ma t vj = -40c 200 ma v gd t vj = 125c; v d = 2 / 3 v drm 0.2 v i gd 10 ma i l t vj = 25c; t p = 10 s 450 ma i g = 0.45 a; di g /dt = 0.45 a/s i h t vj = 25c; v d = 6 v; r gk = 200 ma t gd t vj = 25c; v d = ? v drm 2s i g = 0.45 a; di g /dt = 0.45 a/s r thjc per thyristor; dc 0.5 k/w per module 0.25 k/w r thch per thyristor; sine 180 el typ. 0.12 k/w per module typ. 0.06 k/w d s creeping distance on surface 11.2 mm d a creepage distance in air 17.0 mm a max. allowable acceleration 50 m/s 2 mmo 175 mlo 175 10 100 1000 1 10 100 1000 10 0 10 1 10 2 10 3 10 4 0.1 1 10 i g v g ma ma i g 1: i gt , t vj = 125 c 2: i gt , t vj = 25 c 3: i gt , t vj = -40 c s t gd v 4: p gav = 0.5 w 5: p gm = 5 w 6: p gm = 10 w i gd , t vj = 125 c 3 4 2 1 5 6 limit typ. t vj = 25 c fig. 1 gate trigger characteristics fig. 2 gate trigger delay time dimensions in mm (1 mm = 0.0394")
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